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SSPD_Chapter 6_Part 7_Introduction to ATHENA3_Process Simulator (m37352)
Keywords: Relax Parameter, Spacer Formation,True and False
Summary: SSPD_Chapter 6_Part 7_Introduction to ATHENA3 deals with reducing the grid points
Subject: Science and Technology
Language: English
Popularity: 21.69%
Revised: 2011-04-01
Revisions: New
SSPD_Chapter 6_Part 8_Caliberating ATHENA for typical MOSFET FLOW (m37397)
Keywords: Threshold voltage, quantum model,interstitial
Summary: SSPD_Chapter 6_part 8 deals with setting the process parameters for simulating MOSFET device.
Subject: Science and Technology
Language: English
Popularity: 25.39%
Revised: 2011-04-06
Revisions: New
SSPD_Chapter 6_Part 9_Appendix Device Physics (m37428)
Keywords: HeteroJunction Transistor,Fermi-level pinning, poly-silicon emitter, band-gap narrowing
Summary: SSPD_Chapter 6_Part 9_Appendix on Device Physics describes the models used in ATLAS and ATHENA
Subject: Science and Technology
Language: English
Popularity: 32.66%
Revised: 2011-04-12
Revisions: New
SSPD_Chapter 6_Part 9_Caliberating ATHENA for typical Bipolar Flow Process (m37398)
Keywords: Band Gap Narrowing, Injection level,, Surface Recombination Velocity
Summary: SSPD_Chapter 6_Part 9_Caliberating ATHENA for typical Bipolar Flow Process. For this module a good understanding of the Physics of BJT is must.
Subject: Science and Technology
Language: English
Popularity: 19.63%
Revised: 2011-04-07
Revisions: New
SSPD_Chapter 6_Part 9_Figure IX of Appendix on Device Physics (m37429)
Keywords: Poly-Si Emitter
Summary: SSPD_Chapter 6_Part 9_Figure IX of the Appendix on Device Physics is being uploaded.
Language: English
Popularity: 16.11%
Revised: 2011-04-12
Revisions: New
SSPD_Chapter 7_Part 1_The Art of Microchip Fabrication transforms into HiTech Computer-Aided VLSI DESIGN and Microchip Fabrication.(Untitled) (m38314)
Keywords: Register Level, Logic Level, Circuit Level
Summary: SSPD_Chapter 7 is concerned with the physical level design of VLSI Circuits. SSPD_Chapter 7_Part 1 deals with the level of Automation which has been achieved in the design of VLSI circuits.
Subject: Science and Technology
Language: English
Popularity: 48.27%
Revised: 2011-05-12
Revisions: New
SSPD_Chapter 7_Part 2_BiCMOS Technology (m38358)
Keywords: BiCMOS,ECL, GaAs Technology
Summary: SSPD_Chapter 7_Part 2 gives the necessity of introducing BiCMOS in CMOS circuitary and the technology of fabrication of NPN BJT n CMOS environment.
Subject: Science and Technology
Language: English
Popularity: 38.80%
Revised: 2011-05-17
Revisions: New
SSPD_Chapter 7_Part 3_Basic Electrical Properties of MOS and MOS circuits to be continued1 (m38382)
Keywords: Threshold voltage, pinch-off voltage,ohmic region, saturation region
Summary: SSPD_Chapter 7_Part 3 gives the basic elecrical properties of MOS devices.
Subject: Science and Technology
Language: English
Popularity: 34.27%
Revised: 2011-05-19
Revisions: New
SSPD_Chapter 7_Part 3_Basic Electrical Properties of MOScontinued6 (m38548)
Keywords: Overlap,Oxide, Bulk
Summary: SSPD_Chapter 7_Part 3_Basic Electrical Properties of MOScontinued6 describes the various capacitance associated NMOS in triode region, pentode region and in cut-off region.
Subject: Science and Technology
Language: English
Popularity: 41.72%
Revised: 2011-06-20
Revisions: 2
SSPD_Chapter 7_Part 3_Basic Electrical Properties of MOSFET_concluded. (m38588)
Keywords: Latching,trench isolation,guard rings, spacing,implants
Summary: Chapter 7_Part 3_Conclusion module concludes the basic electrical properties of MOSFET by discussing the latch-up problem and its remedies.
Subject: Science and Technology
Language: English
Popularity: 35.73%
Revised: 2011-06-28
Revisions: New
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Total Collections: 1317
Total Modules: 21811