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<document xmlns="http://cnx.rice.edu/cnxml" xmlns:md="http://cnx.rice.edu/mdml/0.4" xmlns:m="http://www.w3.org/1998/Math/MathML" xmlns:bib="http://bibtexml.sf.net/" id="new23">
  <name>Reverse Biased/Breakdown</name>
  <metadata>
  <md:version>2.11</md:version>
  <md:created>2000/08/04</md:created>
  <md:revised>2007/08/14 11:57:07.966 GMT-5</md:revised>
  <md:authorlist>
      <md:author id="wlw">
      <md:firstname>Bill</md:firstname>
      
      <md:surname>Wilson</md:surname>
      <md:email>wlw@madriver.net</md:email>
    </md:author>
  </md:authorlist>

  <md:maintainerlist>
    <md:maintainer id="wlw">
      <md:firstname>Bill</md:firstname>
      
      <md:surname>Wilson</md:surname>
      <md:email>wlw@madriver.net</md:email>
    </md:maintainer>
    <md:maintainer id="liqun">
      <md:firstname>Liqun</md:firstname>
      
      <md:surname>Wang</md:surname>
      <md:email>liqun@rice.edu</md:email>
    </md:maintainer>
    <md:maintainer id="lizzardg">
      <md:firstname>Elizabeth</md:firstname>
      
      <md:surname>Gregory</md:surname>
      <md:email>elizabeth.gregory@gmail.com</md:email>
    </md:maintainer>
    <md:maintainer id="jsilv">
      <md:firstname>Jeffrey</md:firstname>
      <md:othername>M</md:othername>
      <md:surname>Silverman</md:surname>
      <md:email>JSilverman@astro.berkeley.edu</md:email>
    </md:maintainer>
    <md:maintainer id="gerardw">
      <md:firstname>Gerard</md:firstname>
      
      <md:surname>Wysocki</md:surname>
      <md:email>gerardw@rice.edu</md:email>
    </md:maintainer>
  </md:maintainerlist>
  
  <md:keywordlist>
    <md:keyword>Reverse Biased</md:keyword>
    <md:keyword>Reverse Breakdown</md:keyword>
  </md:keywordlist>

  <md:abstract>Discussing the phenomenon when the diode is reverse biased/breakdown.
</md:abstract>
</metadata>

  <content>
    <para id="operation">
       
      Before we leave diodes, it would be worthwhile exploring some
      other modes of operation, as well as some specific applications
      which will be of interest. We said that when the diode was
      reverse-biased (p-region negative with respect to the n-region)
      that the only current which flows is the reverse saturation
      current, resulting from the few thermally generated minority
      carriers which can fall down (or up) the barrier (<cnxn target="reverse"/>).
      <figure id="reverse">
	<media type="image/png" src="f2_47.png"/> 
	<caption>Reverse saturation current</caption> 
      </figure>
      If we make the reverse bias even greater, the same current
      flows, but the carriers pick up more energy as they fall down
      the (now larger) junction potential. As they do this, it is
      possible for them to pick up so much energy, that when they
      collide with a lattice site, they create an additional
      electron-hole pair through a process called <term>impact
      ionization</term> (<cnxn target="impact"/>). When this occurs,
      we now have current consisting of two electrons and one
      hole. These additional carriers can themselves collide and
      generate additional electron hole pairs as well. The current now
      consists of five electrons and two holes. This process is called
      <term>avalanche multiplication</term> (<cnxn target="avalanche"/>), because we start with one carrier, and
      through a succession of impacts create more and more
      current. This process can in fact run away, much like an
      avalanche on a snowy mountain side, in a process called
      <term>avalanche breakdown</term>.
      <figure id="impact">
	<media type="image/png" src="f2_48.png"/>
	<caption>Impact Ionization</caption>
      </figure>     
      The net effect is to change the reverse characteristics of the
      diode somewhat. If we include the effect of breakdown in the I-V
      curve for the diode, we would see something like that in
      <cnxn target="diodecurve"/>.
    </para>
      <figure id="avalanche">
	<media type="image/png" src="f2_49.png"/>
	<caption>Avalanche multiplication</caption>
      </figure>
    <figure id="diodecurve">
      <media type="image/png" src="f2_50.png"/>
      <caption>	  
	Diode I-V Curve showing both the forward characteristics and
	reverse breakdown
      </caption>
    </figure> 
    <para id="para1">
      There is now a sudden onset of current after the avalanche
      breakdown voltage has been exceeded. Do not be confused into
      thinking that this "breakdown" means that the diode has been
      damaged. The process of avalanching itself is not
      destructive. But as you can see from <cnxn target="impact"/>,
      the diode current increases very rapidly once the breakdown
      threshold has been exceeded. Thus, if there is not something in
      series with the diode to limit the maximum current through it,
      it could be damaged by overheating. Diodes in breakdown are used
      as voltage references (the voltage across them is more or less
      independent of the current running through them) but you will
      always find a series current limiting resistor used along with
      them. Such diodes are called <term>Zener Diodes</term> (named
      after the grandfather of Will Rice's George Zener who graduated
      a few years ago...that is George did, not his grandfather) but
      the name is kind of a misnomer. The <term>Zener Effect</term> is
      also a reverse breakdown phenomena, but comes from direct field
      generation of extra carriers, rather than as a result of impact
      ionization. In truth, you can not tell the one effect from the
      other by looking at the diode I-V curve, and so all diodes used
      in reverse breakdown are called Zener Diodes. A circuit using a
      Zener diode as a voltage reference is shown in <cnxn target="regulator"/>.
    </para>
      <figure id="regulator">
	<media type="image/png" src="f2_51.png"/>
	<caption>Voltage regulator circuit</caption>
      </figure>
      
  </content> 
</document>
