Crystallographic positional disorder is evident when a position in the lattice is occupied by two or more atoms; the average of which constitutes the bulk composition of the crystal. If a particular atom occupies a certain position in one unit cell and another atom occupies the same position in other unit cells, the resulting electron density will be a weight average of the situation in all the unit cells throughout the crystal. Since the diffraction experiment involves the average of a very large number of unit cells (ca. 1018 in a crystal used for single crystal X-ray diffraction analysis), minor static displacements of atoms closely simulate the effects of vibrations on the scattering power of the “average” atom. Unfortunately, the determination of the “average” atom in a crystal may be complicated if positional disorder is encountered.
Crystal disorder involving groups such as CO, CN and Cl have been documented to create problems in assigning the correct structure through refinement procedures. While attempts have been made to correlate crystallographic lattice parameters with bulk chemical composition of the solution from which single crystal was grown, there has been little effort to correlate crystallographic site occupancy with chemical composition of the crystal from which single crystal diffraction data was obtained. These are two very different issues that must be considered when solving a crystal structure with site occupancy disorder.
- What is the relationship of a single crystal to the bulk material?
- Is the refinement of a site-occupancy-factor actually gives a realistic value for % occupancy when compared to the "actual" % composition for that particular single crystal?
The following represents a description of a series of methods for the refinement of a site occupancy disorder between two atoms (e.g., two metal atoms within a mixture of isostructural compounds).









