Summary: Abstract: This describes the D.C. parameters of BJT.
Analog Electronics Lecture 2_PartC_I-V output characteristics of BJT
Key words;BJT;
Abstract: This describes the D.C. parameters of BJT.
BJT Common Base Configuration:
For CB Configuration :
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IC= αFMIE + ICBO
Where αF= D.C. Forward current transfer Ratio of CB BJT = IC/IE ;
M = Avalanche Multiplication Factor at Base-Collector Junction given by = 1/[1-(Vcb/BVcbo)^n]
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Where n= Miller Indices =2~6
ICBO = Reverse leakage current at CB Jn with emitter open.
OUTPUT CHARACTERISTICS OF Common Base Bipolar Junction transistor
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IC = ICBO when IE = 0 mA. This is the reverse leakage current at CB Junction with Emitter open and is of nA range.
BJT Common Emitter(CE) Configuration:
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For CE Configuration :
IC = αFMIE + ICBO
=> IC = αFM(IB+IC)+ ICBO
=> IC(1-αFM)= αFMIB + ICBO
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If M=1,
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Where αF =0.99.
At low voltages we have M=1.
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Then we get:
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That is:
OUTPUT CHARACTERISTICS OF Common Emitter Bipolar Junction transistor
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NOTE:-The slope in the figure is due to base width modulation which is also known as Early Effect.
IC = ICEO when IB = 0 mA. This is the collector junction leakage current at CB Junction with Base open and is of µA range.
Let us consider :
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If αFM =1, then
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At this point , break over occurs. And we have BVCEO=Break-over Voltage with Base Circuit open.
When αFM =1
That is
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But :
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Thus :
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Thus:
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Putting the required Values i.e. BVCBO=30V, βF = 100 , we get VCB*=18 V = BVceo ;
Now we have to know more about BVCES (Breakover Voltage when the base circuit is shorted)
BVCBO >BVCEX >BVCES >BVCEO
Where BVCBO= Breakover Voltage of the collector base junction when the emitter circuit is open.
BVCEX= Breakover Voltage of CE BJT for a given termination RX at the base
BVCEO= Breakover Voltage of CE BJT when the base circuit is open.
BVCES= Breakover Voltage of CE BJT when the base circuit is shorted to ground.
BVCEX= Breakover Voltage when the base circuit is connected to ground through a source Resistance (RS) .
By proper base termination, the permissible region of operation can be extended upto BVCBO.
Thus we have seen that breakover occurs at αFM =1. At low current αF is very small, almost about 0.1.Therefore voltage has to be taken to a large value to satisfy αFM =1. But as soon as breakover occurs large current starts flowing. With large current αF improves from 0.1 to 0.99. Hence αFM =1 is satisfied at lower voltage Vs. Therefore breakover curves settles down at Vs. This voltage VS is known as sustaining voltage. Because of the fact that :
VS < BVCEO
We get a S Type Negative Impedance Region(NIR). In SCR and UJT also we get S Type NIR but in Tunnel Diode as shown in the Figure below we get N Type NIR.
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COMPARISON BETWEEN COMMON BASE AND COMMON EMITTER CONFIGURATIONS
| S.No. | COMMON BASE | COMMON EMITTER |
| 1 | hrb(reverse transmission factor)~10-5Thus it behaves as a near unilateral device. | hre~10-4Thus it behaves as a non-unilateral device. |
| 2 | In RF applications the circuit has a high probability of parasitic oscillations but in CB because of near unilaterality , probability of parasitic oscillation goes down. Hence for RF applications CB is the preferred circuit configuration. | At low frequencies there is no danger of parasitic oscillations hence CE can be used even with poor reverse transmission factor. |
| 3 | hob = 1/(2M)Thus it behaves as a near ideal current source. Thus it is very suitable for charging a capacitance with a constant current to generate a saw-tooth waveform. | hoe=1/(40K)Thus it behaves as a non-ideal current source. |
Both CB and CE are Current Controlled Current Source. CB is a near ideal CCCS whereas CE is a non-ideal CCCS.